low noise xfet voltage references with current sink and source capability adr431-ep/adr434-ep/adr435-ep rev. a information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ?2010 analog devices, inc. all rights reserved. features low noise (0.1 hz to 10.0 hz): 3.5 v p-p @ 2.5 v out (adr431-ep) no external capacitor required low temperature coefficient t grade: 3 ppm/c maximum (adr434-ep/adr435-ep) t grade: 5 ppm/c maximum (adr431-ep) load regulation: 15 ppm/ma line regulation: 20 ppm/v wide operating range: 4.5 v to 18 v (adr431-ep) high output source and sink current: +10 ma and ?10 ma enhanced product features supports defense and aerospace applications (aqec standard) military temperature range (?55c to +125c) controlled manufacturing baseline one assembly/test site one fabrication site enhanced product change notification qualification data available on request applications precision data acquisition systems high resolution data converters optical control circuits precision instruments pin configuration 09218-001 tp 1 v in 2 nc 3 gnd notes 1. nc = no connect. 2. tp = test pin (do not connect). 4 tp 8 comp 7 v out 6 trim 5 top view (not to scale) adr431-ep/ adr434-ep/ adr435-ep figure 1. 8-lead soic_n (r-8) general description the adr431-ep/adr434-ep/adr435-ep are xfet? voltage references featuring low noise, high accuracy, and low temperature drift performance. using analog devices, inc., patented temperature drift curvature correction and xfet (extra implanted junction fet) technology, voltage change vs. temperature nonlinearity in the adr431-ep/adr434-ep/adr435-ep is minimized. the xfet references operate at lower current (800 a) and lower supply voltage headroom (2 v) than buried zener references. buried zener references require more than 5 v headroom for operation. the adr431-ep/adr434-ep/ adr435-ep xfet references are optimal low noise solutions for 5 v systems. the adr431-ep/adr434-ep/adr435-ep have the capability to source up to 10 ma of output current and sink up to ?10 ma. they also come with a trim terminal to adjust the output voltage over a 0.5% range without compromising performance. the adr431-ep/adr434-ep/adr435-ep are available in an 8-lead narrow soic package and are specified over the military temperature range of ?55c to +125c. additional application and technical information can be found in the adr430 / adr431 / adr433 / adr434 / adr435 / adr439 data sheet. table 1. selection guide model output voltage (v) accuracy (mv) temperature coefficient (ppm/c) adr431t-ep 2.500 1.0 5 adr434t-ep 4.096 1.5 3 adr435t-ep 5.000 2.0 3
adr431-ep/adr434-ep/adr435-ep rev. a | page 2 of 8 table of contents features .............................................................................................. 1 enhanced product features ............................................................ 1 applications ....................................................................................... 1 pin configuration ............................................................................. 1 general description ......................................................................... 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 adr431-ep electrical characteristics ...................................... 3 adr434-ep electrical characteristics ...................................... 4 adr435-ep electrical characteristics .......................................5 absolute maximum ratings ............................................................6 thermal resistance .......................................................................6 esd caution...................................................................................6 typical performance characteristics ..............................................7 outline dimensions ..........................................................................8 ordering guide .............................................................................8 revision history 8/10rev. 0 to rev. a added adr431-ep ....................................................... throughout added adr435-ep ....................................................... throughout changes to ordering guide ............................................................ 8 7/10revision 0: initial version
adr431-ep/adr434-ep/adr435-ep rev. a | page 3 of 8 specifications adr431-ep electrical characteristics v in = 4.5 v to 18 v, i l = 0 ma, t a = 25c, unless otherwise noted. table 2. parameter symbol test conditions/comments min typ max unit output voltage v o t grade 2.499 2.500 2.501 v initial accuracy v oerr t grade 1.0 mv 0.04 % temperature coefficient tcv o t grade ?55c < t a < +125c 1.5 5 ppm/c line regulation v o /v in v in = 4.5 v to 18 v, ?55c < t a < +125c 5 20 ppm/v load regulation v o /i l i l = 0 ma to 10 ma, v in = 5 v, ?55c < t a < +125c 15 ppm/ma v o /i l i l = ?10 ma to 0 ma, v in = 5 v, ?55c < t a < +125c 15 ppm/ma quiescent current i in no load, ?55c < t a < +125c 580 800 a voltage noise e n p-p 0.1 hz to 10.0 hz 3.5 v p-p voltage noise density e n 1 khz 80 nv/hz turn-on settling time t r c l = 0 f 10 s long-term stability 1 ?v o 1000 hours 40 ppm output voltage hysteresis v o_hys 20 ppm ripple rejection ratio rrr f in = 1 khz ?70 db short circuit to gnd i sc 40 ma supply voltage operating range v in 4.5 18 v supply voltage headroom v in ? v o 2 v 1 the long-term stability specification is noncumulative. the drift in subsequent 1000 hour periods is sign ificantly lower than in the first 1000 hour period.
adr431-ep/adr434-ep/adr435-ep rev. a | page 4 of 8 adr434-ep electrical characteristics v in = 6.1 v to 18 v, i l = 0 ma, t a = 25c, unless otherwise noted. table 3. parameter symbol test conditions/comments min typ max unit output voltage v o t grade 4.0945 4.096 4.0975 v initial accuracy v oerr t grade 1.5 mv 0.04 % temperature coefficient tcv o t grade ?55c < t a < +125c 1 3 ppm/c line regulation v o /v in v in = 6.1 v to 18 v, ?55c < t a < +125c 5 20 ppm/v load regulation v o /i l i l = 0 ma to 10 ma, v in = 7 v, ?55c < t a < +125c 15 ppm/ma v o /i l i l = ?10 ma to 0 ma, v in = 7 v, ?55c < t a < +125c 15 ppm/ma quiescent current i in no load, ?55c < t a < +125c 595 800 a voltage noise e n p-p 0.1 hz to 10.0 hz 6.25 v p-p voltage noise density e n 1 khz 100 nv/hz turn-on settling time t r c l = 0 f 10 s long-term stability 1 ?v o 1000 hours 40 ppm output voltage hysteresis v o_hys 20 ppm ripple rejection ratio rrr f in = 1 khz ?70 db short circuit to gnd i sc 40 ma supply voltage operating range v in 6.1 18 v supply voltage headroom v in ? v o 2 v 1 the long-term stability specification is noncumulative. the drift in subsequent 1000 hour periods is sign ificantly lower than in the first 1000 hour period.
adr431-ep/adr434-ep/adr435-ep rev. a | page 5 of 8 adr435-ep electrical characteristics v in = 7.0 v to 18 v, i l = 0 ma, t a = 25c, unless otherwise noted. table 4. parameter symbol test conditions/comments min typ max unit output voltage v o t grade 4.998 5.000 5.002 v initial accuracy v oerr t grade 2.0 mv 0.04 % temperature coefficient tcv o t grade ?55c < t a < +125c 1 3 ppm/c line regulation v o /v in v in = 7.0 v to 18 v, ?55c < t a < +125c 5 20 ppm/v load regulation v o /i l i l = 0 ma to 10 ma, v in = 8 v, ?55c < t a < +125c 15 ppm/ma v o /i l i l = ?10 ma to 0 ma, v in = 8 v, ?55c < t a < +125c 15 ppm/ma quiescent current i in no load, ?55c < t a < +125c 620 800 a voltage noise e n p-p 0.1 hz to 10.0 hz 8 v p-p voltage noise density e n 1 khz 115 nv/hz turn-on settling time t r c l = 0 f 10 s long-term stability 1 ?v o 1000 hours 40 ppm output voltage hysteresis v o_hys 20 ppm ripple rejection ratio rrr f in = 1 khz ?70 db short circuit to gnd i sc 40 ma supply voltage operating range v in 7.0 18 v supply voltage headroom v in ? v o 2 v 1 the long-term stability specification is noncumulative. the drift in subsequent 1000 hour periods is sign ificantly lower than in the first 1000 hour period.
adr431-ep/adr434-ep/adr435-ep rev. a | page 6 of 8 absolute maximum ratings t a = 25c, unless otherwise noted. table 5. parameter rating supply voltage 20 v output short-circuit duration to gnd indefinite storage temperature range ?65c to +125c operating temperature range ?55c to +125c junction temperature range ?65c to +150c lead temperature, soldering (60 sec) 300c stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ja is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. table 6. thermal resistance package type ja jc unit 8-lead soic_n (r) 130 43 c/w esd caution
adr431-ep/adr434-ep/adr435-ep rev. a | page 7 of 8 typical performance characteristics 5 v, c l = 5 pf, g = 2, r g = r f = 1 k, r l = 2 k, v o = 2 v p-p, f = 1 mhz, t a = 25c, unless otherwise noted. 0.80 +125c +25c ?55c 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 6 8 10 12 14 16 18 input voltage (v) supply current (ma) 09218-002 figure 2. supply current vs. temperature
adr431-ep/adr434-ep/adr435-ep rev. a | page 8 of 8 outline dimensions controlling dimensions are in millimeters; inch dimensions (in parentheses) are rounded-off millimeter equivalents for reference only and are not appropriate for use in design. compliant to jedec standards ms-012-aa 012407-a 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099) 45 8 0 1.75 (0.0688) 1.35 (0.0532) seating plane 0.25 (0.0098) 0.10 (0.0040) 4 1 85 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) bsc 6.20 (0.2441) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122) coplanarity 0.10 figure 3. 8-lead standard small outline package [soic_n] narrow body (r-8) dimensions shown in millimeters and (inches) ordering guide model 1 output voltage (v) initial accuracy, temperature coefficient package (ppm/c) temperature range package description package option ordering quantity (mv) (%) adr431trz-ep 2.500 1.0 0.04 5 ?55c to +125c 8-lead soic_n r-8 98 ADR431TRZ-EP-R7 2.500 1.0 0.04 5 ?55c to +125c 8-lead soic_n r-8 1,000 adr434trz-ep 4.096 1.5 0.04 3 ?55c to +125c 8-lead soic_n r-8 98 adr434trz-ep-r7 4.096 1.5 0.04 3 ?55c to +125c 8-lead soic_n r-8 1,000 adr435trz-ep 5.000 2.0 0.04 3 ?55c to +125c 8-lead soic_n r-8 98 adr435trz-ep-r7 5.000 2.0 0.04 3 ?55c to +125c 8-lead soic_n r-8 1,000 1 z = rohs compliant part. ?2010 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. d09218-0-8/10(a)
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